Cart (Loading....) | Create Account
Close category search window
 

Advanced in situ pre-Ni silicide (Siconi) cleaning at 65 nm to resolve defects in NiSix modules

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Yang, Ruipeng ; Semiconductor Manufacturing International Corporation, Shanghai City 201203, China ; Su, Na ; Bonfanti, P. ; Jiaxiang Nie
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.3271334 

The existing Ar plasma sputter cleaning and dilute HF dip wet cleaning techniques have drawbacks, including critical dimension change, plasma damage, poor selectivity to oxides, vacuum breakage (causing oxide formation), and queue-time control. Siconi cleaning, a newly developed cleaning process for pre-Ni silicide cleaning at 65 nm, enables superior cleaning performance, including (1) selective removal of native oxide to minimize loss of Si and Ni, (2) elimination of spikes and reduction of pipe defects at the NiSi/Si interface, and (3) elimination of the queue-time dependency for improved productivity and simplification of fabrication. In this study, the chemical mechanism, hardware configuration, and Siconi integration results are described. The formation mechanisms for both spike and pipe defects are discussed, and practical solutions to these problems are addressed in detail. A significant reduction in junction leakage current, by three orders of magnitude, was observed. In addition, the pipe defect at the wafer edge is described and discussed.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:28 ,  Issue: 1 )

Date of Publication:

Jan 2010

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.