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Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes

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4 Author(s)
Kim, Hong-Yeol ; Department of Chemical and Biological Engineering, Korea University, Seoul 136-701, Korea ; Kim, Jihyun ; Ren, F. ; Jang, Soohwan

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InGaN/GaN multiquantum well light-emitting diodes (LED) with emission wavelength of 450 nm were irradiated with average energy of 9.8 MeV and dose of 5.5×1011 cm-2 neutrons. Right after irradiation, the forward current of the irradiated LEDs was decreased as a result of the creation of deep levels by the neutron-induced lattice displacement. However, unstable lattice damages resulting from the collisions with the incoming neutrons were removed at room temperature 6 days after the irradiation. The diode turn-on voltage, ideality factor, and optical emission intensity were recovered to preirradiated state by self-annealing process at room temperature.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:28 ,  Issue: 1 )