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Improved quality of nonpolar m-plane GaN [1010] on LiAlO2 substrate using a modified chemical vapor deposition

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7 Author(s)
Chou, Mitch M.C. ; Department of Materials and Opto-electronic Science, National Sun Yat-Sen University, 80424 Kaohsiung, Taiwan ; Hang, Da-Ren ; Chang, Liuwen ; Chen, Chenlong
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Nonpolar GaN crystal on lattice-matched [100] γ-LiAlO2 substrate was grown by a newly designed chemical vapor deposition (CVD) reactor. Following the CVD growth, x-ray diffraction indicated that the GaN film was oriented in the nonpolar m-plane with [1010] orientation. Further structural characterizations and defect analysis of nonpolar GaN material was performed using transmission electron microscope. Low-temperature photoluminescence was dominated by neutral donor bound excitons and the yellow luminescence was negligible. Raman spectroscopy showed that the as-grown GaN {1010} epilayer on [100] γ-LiAlO2 substrate were indeed of good quality. Compared to the previous report, nonpolar GaN with an improved quality was demonstrated by modifying the inner structure of the CVD reactor.

Published in:

Journal of Applied Physics  (Volume:107 ,  Issue: 1 )