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High Characteristic Temperature of Highly Stacked Quantum-Dot Laser for 1.55- \mu m Band

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3 Author(s)
Akahane, K. ; Nat. Inst. of Inf. & Commun. Technol., Koganei, Japan ; Yamamoto, N. ; Kawanishi, T.

We fabricated broad-area laser diodes comprising 30-layer stacks of InAs quantum dots (QDs) by using strain compensation. The devices exhibited ground-state lasing at 1529 nm in pulsed mode with a high characteristic temperature of 113 K around room temperature (20°C-80°C). Ground-state lasing was achieved because of the high QD density afforded by strain compensation.

Published in:

Photonics Technology Letters, IEEE  (Volume:22 ,  Issue: 2 )