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Investigation of Sub-10-nm Diameter, Gate-All-Around Nanowire Field-Effect Transistors for Electrostatic Discharge Applications

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7 Author(s)
Liu, W. ; Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA ; Liou, J.J. ; Jiang, Y. ; Singh, N.
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Electrostatic discharge (ESD) robustness of a promising nanoscaled device, the gate-all-around nanowire field-effect transistor (NW FET), was characterized for the first time using the transmission-line pulsing technique. The effects of gate length, nanowire dimension, and nanowire count on the failure current, leakage current, trigger voltage, and on-resistance were investigated. ESD performances of the gate-all-around NW FET and other nanostructure devices, such as the poly-Si nanowire thin-film transistor and FinFET were also compared and discussed.

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Nanotechnology, IEEE Transactions on  (Volume:9 ,  Issue: 3 )