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Passive Mode-Locking of a Ti : Sapphire Laser by InGaP Quantum-Dot Saturable Absorber

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8 Author(s)
Vasili G. Savitski ; Institute of Photonics, University of Strathclyde, GLASGOW, UK ; Peter J. Schlosser ; Jennifer E. Hastie ; Andrey B. Krysa
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We demonstrate the use of a novel InGaP quantum-dot (QD) saturable absorber (SA) to induce passively mode-locked (ML) operation of a Ti : sapphire laser. Pulses as short as 518 fs are obtained at 752 nm with an average output power of up to 190 mW for 2.3 W of absorbed pump power at 532 nm. The absorption recovery of the SA is characterized by two decay coefficients: a fast and a slow component having time constants of 0.4 and 300 ps, respectively. The saturation fluence of the InGaP QDs was measured to be 28 ??J/cm2, the initial low-signal absorption was 1.5%, where 1.15% was nonsaturable loss.

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IEEE Photonics Technology Letters  (Volume:22 ,  Issue: 4 )