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High-Voltage n-Channel IGBTs on Free-Standing 4H-SiC Epilayers

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2 Author(s)
Xiaokun Wang ; Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA ; Cooper, J.A.

In this paper, we describe a process for fabricating high-voltage n-channel double-diffused metal-oxide-semiconductor insulated gate bipolar transistors (IGBTs) on free-standing 4H silicon carbide (SiC) epilayers. In this process, all critical layers are epitaxially grown in a continuous sequence. The substrate is then removed, and device fabrication takes place on the carbon face of a free-standing epilayer having a total thickness of about 180 ¿m. For a drift layer with doping and thickness values capable of blocking 20 kV, the n-channel IGBT carries 27.3-A/cm2 current at a power dissipation of 300 W/cm2, with a differential on-resistance of 177 m¿·cm2. To our knowledge, this is the first detailed report of device fabrication on free-standing SiC epilayers.

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Electron Devices, IEEE Transactions on  (Volume:57 ,  Issue: 2 )