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Fabrication of Sub-10 nm Planar Nanofluidic Channels Through Native Oxide Etch and Anodic Wafer Bonding

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2 Author(s)
Song, Chunrong ; Dept. of Electr. & Comput. Eng., Clemson Univ., Clemson, SC, USA ; Pingshan Wang

A simple, multiple-hydrofluoric (HF)-dip process is developed and characterized to etch native silicon-dioxide (SiO2) to obtain shallow silicon trenches. The room-temperature SiO2 grow-etch-grow process yields an etch rate of ~ 1 nm/HF-dip with atomically smooth trench surface. Low-temperature, low-voltage anodic bonding yields sub-10 nm deep planar nanochannels with aspect ratios as small as 0.002.

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Nanotechnology, IEEE Transactions on  (Volume:9 ,  Issue: 2 )