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Experimental and theoretical analysis of dopant activation in double implanted silicon by pulsed laser thermal annealing

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11 Author(s)
Huet, K. ; Boniface, C. ; Fisicaro, G. ; Desse, F.
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A collection of slides from the author's conference presentation shows dopant activation by pulsed laser thermal annealing. It also discusses single pulse deep melt activation, layer electrical properties and specific multiple layer junctions properties.

Published in:
Advanced Thermal Processing of Semiconductors, 2009. RTP '09. 17th International Conference on

Date of Conference: Sept. 29 2009-Oct. 2 2009

Page(s):
1 - 16
ISSN :
1944-0251
E-ISBN :
978-1-4244-3815-0
Print ISBN:
978-1-4244-3814-3
INSPEC Accession Number:
11055972
Conference Location :
Albany, NY
Digital Object Identifier :
10.1109/RTP.2009.5373482
Product Type:
Conference Publications

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