Skip to Main Content
We have developed a carbon absorber process to reduce the pattern effect. This process consists of deposition of carbon, flash lamp annealing (FLA) in an oxygen ambient and SPM-APM wet cleaning. The feature of this process is that the carbon absorber equalizes the light absorption from flash lamps macroscopically and microscopically on the annealed wafer. As a result, we can suppress the pattern effect such that the uniformity of Rs in a 40 mm Ã 40 mm area is improved from 11.4% to 2.1%. Additionally this process can achieve higher activation than that without the carbon absorber process. We also demonstrate that a flexibly-shaped-pulse FLA (FSP-FLA) can suppress the pattern effect to give a uniformity of 3.4%. By combining the carbon-absorber process with FSP-FLA, we can achieve 1.6%. This Rs uniformity of the pattern effect is comparable to that of sRTA.