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High-field Hall effect and magnetoresistance in Fe3O4 epitaxial thin films up to 30 Tesla

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9 Author(s)
Fernandez-Pacheco, A. ; Instituto de Nanociencia de Aragόn, Universidad de Zaragoza, Zaragoza 50018, Spain ; Orna, J. ; De Teresa, J.M. ; Algarabel, P.A.
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We have measured the Hall effect and the magnetoresistance of epitaxial Fe3O4 thin films grown on MgO (001) in magnetic fields up to 30 T. Using such high fields, it is possible to magnetically saturate films thicker than 40 nm, providing access to intrinsic conduction properties. We find an effective electron density corresponding to 1 electron per f.u. A smaller value is obtained for thinner films, caused by the increasing density of antiphase boundaries defects. The magnetoresistance is not saturating at 30 T, showing linear dependence at high fields, and peaks at the Verwey transition.

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 26 )

Date of Publication:

Dec 2009

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