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Improved hole injection and transport of organic light-emitting devices with an efficient p-doped hole-injection layer

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7 Author(s)
Dan-Dan Zhang ; State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People’s Republic of China ; Feng, Jing ; Hai Wang ; Yu Bai
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A 4,4,4-tris(3-methylphenylphenylamino)triphenylamine thin film doped with Fe3O4 has been demonstrated an efficient p-type hole-injection layer (HIL) in organic light-emitting devices (OLEDs). The tris-(8-hydroxyquinoline) aluminum-based OLEDs with the p-type HIL exhibit a very low turn-on voltage of 2.4 V and a high luminance of 29 360 cd/m2 at 8 V, while it is 3 V and 6005 cd/m2, respectively, for the nondoped devices. The improvement in the device performance is clarified as arising from the improved hole injection and transport by the results of ultraviolet/visible/near-infrared absorption, x-ray photoelectron spectra and current density-voltage characteristics of hole-only devices.

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 26 )

Date of Publication:

Dec 2009

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