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UV laser-assisted multiple evanescent waves lithography for near-field nanopatterning

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2 Author(s)
Chua, J.K. ; Sch. of Mech. & Aerosp. Eng., Nanyang Technol. Univ., Singapore, Singapore ; Murukeshan, V.M.

A single exposure multiple evanescent waves interference lithography approach for patterning of nanoscale two-dimensional (2D) features is described and illustrated theoretically and experimentally in this Letter. Sub-70 nm (?? 0.19 ) full-width at half-maximum (FWHM) 2D features, with a pitch size smaller than ??/2, are fabricated by exposing conventional positive tone UV photoresist to the interference between four counter-propagating evanescent waves, which are generated by total internal reflection of polarised incident beams. The effects of polarisation and exposure duration are also investigated.

Published in:

Micro & Nano Letters, IET  (Volume:4 ,  Issue: 4 )

Date of Publication:

Dec. 2009

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