Cart (Loading....) | Create Account
Close category search window

Off-state breakdown effects on gate leakage current in power pseudomorphic AlGaAs/InGaAs HEMTs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Chou, Y.C. ; Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA ; Li, G.P. ; Chen, Y.C. ; Wu, C.S.
more authors

The effects of off-state breakdown on characteristics of power AlGaAs/InGaAs pseudomorphic HEMTs (PHEMTs) are investigated in detail. While the gate leakage current is substantially decreased after breakdown stress, no obvious changes in drain-to-source current and transconductance are observed. Prior to breakdown stress, gate leakage current shows a nearly ideal 1/f noise characteristic with an Ig/sup 2/ dependence, suggesting a surface generation-recombination current from the interface of the passivation layer. After stress, the gate current noise can be drastically reduced. The results suggest an alternative for alleviating the gate leakage current in PHEMTs.

Published in:

Electron Device Letters, IEEE  (Volume:17 ,  Issue: 10 )

Date of Publication:

Oct. 1996

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.