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InP-based self-aligned normally-off superlattice-insulated-gate field-effect transistor

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3 Author(s)
C. L. Chen ; Lincoln Lab., MIT, Lexington, MA, USA ; L. J. Mahoney ; E. R. Brown

An InP-based normally-off superlattice-insulated gate field-effect transistor (SIGFET) is developed using a self-aligned implant process. The new gate structure reduces the gate current significantly and yields a sharp pinch off. A SIGFET with 0.7 μm gate length delivers more than 800 mA/mm of drain current at 2 V of forward gate bias and yields an fT as high as 42 GHz. An explanation for a new kink effect is also proposed.

Published in:

IEEE Electron Device Letters  (Volume:17 ,  Issue: 10 )