Cart (Loading....) | Create Account
Close category search window
 

A hybrid 6H-SiC temperature sensor operational from 25°C to 500°C

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Casady, J.B. ; NASA Centre for Comput. Dev. & Adv. Electron., Auburn Univ., AL, USA ; Dillard, W.C. ; Johnson, R.W. ; Rao, U.

6H-SiC buried-gate n-channel depletion-mode junction field-effect transistors (JFETs) were characterized from 25°C to 350°C in terms of transconductance (gm), pinchoff voltage (VP ), output resistance (ro), input resistance (Rin ), drain-to-source current at zero gate-to-source voltage (IDSS), gate-to-source reverse biased leakage current (IGSS), off-state drain-to-source current (IDSS(off) ), and noise power spectral density (SV). The 6H-SiC JFET's were used in a hybrid temperature monitoring circuit (tested from -196°C to 500°C) fabricated at Auburn University for use in numerous industrial applications. Simulation program with integrated circuit emphasis (SPICE) simulations of the temperature monitoring circuit's output voltage corresponded well with measured data as a function of temperature. Linear regression (LR) analysis of measured data revealed a notably sensitive (~2.3 mV/°), and an eminently linear (correlation coefficient =-0.0996...over 25°C to 500°C range) relationship between the measured output voltage and temperature. Below -50°C, the output became nonlinear, presumably from carrier freeze-out effects. To the best of our knowledge, this represents the first successful implementation of SiC active devices into a temperature sensor which demonstrated stable operation up to 500°C

Published in:

Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on  (Volume:19 ,  Issue: 3 )

Date of Publication:

Sep 1996

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.