By Topic

GaInP/InGaAs/GaAs graded barrier MODFET grown by OMVPE: design, fabrication, and device results

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
B. Pereiaslavets ; Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA ; K. H. Bachem ; J. Braunstein ; L. F. Eastman

GaxIn1-xP/GayIn1-x As/GaAs Modulation Doped Field Effect Transistors (MODFET's) with a pseudomorphic barrier and a pseudomorphic channel were grown by Organo Metallic Vapor Phase Epitaxy (OMVPE). This material system is promising for advanced MODFET's on GaAs for high frequency and power applications, because of the large discontinuity in the conduction band, advantages in the processing and the capability to increase the energy separation between the bottom of the conduction band and Fermi level by compositionally grading the barriers. Record 2-dimensional Electron Gas (2-DEG) carrier densities of 3.1·1012 cm-2 for single-sided MODFET's were measured. Measured RF power at 10 GHz for 0.25 pm devices was ⩾0.4 W/mm. For the first time cutoff frequencies fT and fmax exceeding 105 and 188 GHz, respectively, were obtained for this material system with 0.1 μm gate-length MODFET's

Published in:

IEEE Transactions on Electron Devices  (Volume:43 ,  Issue: 10 )