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Chemically modified ink-jet printed silver electrodes for organic field-effect transistors

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2 Author(s)
Whiting, Gregory Lewis ; Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304, USA ; Arias, Ana Claudia

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Modification of ink-jet printed silver source and drain electrodes for organic field-effect transistors (FETs) with the electron acceptor 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) was investigated. Solution-based deposition of F4TCNQ onto ink-jet printed silver electrodes formed using either a nanoparticle-based or a metal organic decomposition ink, lead to a greater than tenfold improvement in FET mobility. Using these modified electrodes with the organic semiconductor 6,13-bis(triisopropylsilylethynyl) pentacene yields devices with a charge carrier mobility up to 0.9 cm2V-1s-1 and a current on/off ratio of 106.

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 25 )