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Carrier capture and escape times in In0.35Ga0.65As-GaAs multiquantum-well lasers determined from high-frequency electrical impedance measurements

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5 Author(s)
Esquivias, I. ; Dept. de Tecnologia Fotonica, Univ. Politecnica de Madrid, Spain ; Weisser, S. ; Romero, B. ; Ralston, J.D.
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We present experimental results on the high-frequency electrical impedance of In/sub 0.35/Ga/sub 0.65/As-GaAs multiquantum-well lasers with varied p-doping levels in the active region. The analysis of the data, using a simple three rate equation model, provides information about the dynamical time constants (the carrier lifetime, the effective carrier capture and escape times) under the laser operation conditions. The addition of p-doping increases the carrier escape time at threshold from 0.7 ns, extracted for the undoped devices, up to a value higher than 2 ns for the p-doped lasers. The effective capture time is estimated to be between 2 and 5 ps.

Published in:

Photonics Technology Letters, IEEE  (Volume:8 ,  Issue: 10 )