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High-efficiency AlGaAs-based laser diode at 808 nm with large transverse spot size

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3 Author(s)
Emanuel, M.A. ; Lawrence Livermore Nat. Lab., CA, USA ; Carlson, N.W. ; Skidmore, J.A.

Lasers diodes having a large transverse spot size have been fabricated from a modified graded index separate confinement heterostructure with an active region consisting of two 70 /spl Aring/ Al/sub 0.15/In/sub 0.10/Ga/sub 0.75/As strained quantum wells. The catastrophic optical damage threshold for these large transverse mode devices is increased by more than two times over that of conventional devices while still maintaining good device performance.

Published in:

Photonics Technology Letters, IEEE  (Volume:8 ,  Issue: 10 )