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With the characteristics of mass memory and highspeed storing, the NAND FLASH have been widely accepted in the filed of date storage. However, due to the restrictions on use of it, the NAND FLASH can not realize the date storing and reading into operation at the same time, and the bad block may be generated when NAND FLASH under using. In this paper, a plan is proposed to solve the problems. The NAND FLASH and SRAM are used together to realize the data storing and reading working simultaneously, and the bad blocks of NAND FLASH can also be managed.