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We report high peak-to-valley current ratio (PVR) resonant tunneling diodes (RTDs) bonded to silicon. Pseudomorphic AlAs/In/sub 0.53/Ga/sub 0.47/As/InAs resonant tunneling diode structures grown on semi-insulating InP with peak-to-valley current ratios as high as 30 at 300 K have been separated from the growth substrate and bonded to silicon substrates coated with Si/sub 3/N/sub 4/, forming thin film devices. In addition, thin film multiple stack RTD structures have been bonded to silicon substrates. The I-V characteristics of both the single and multi-stacked thin film RTD's exhibit no signs of degradation after bonding to the host substrate. These results are the first successful demonstration of InP based electronics bonded to a silicon host substrate and enable the integration of RTDs with conventional silicon circuitry.