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Fluorine effects in n-p-n double-diffused polysilicon emitter bipolar transistors

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4 Author(s)

We demonstrate that fluorine incorporation in the polysilicon emitter of n-p-n double-diffused bipolar transistors during BF/sub 2/ implantation at a dose of 1/spl times/10/sup 15/ cm/sup -2/ significantly alters the device electrical characteristics. In particular, tunneling emitter/base currents are observed at both forward and reverse voltages, due to excessive base dopant concentration at the junction. Fluorine-enhanced interfacial oxide break-up and epitaxial realignment of the poly-Si emitter are shown to be responsible for these results.

Published in:

Electron Device Letters, IEEE  (Volume:17 ,  Issue: 9 )

Date of Publication:

Sept. 1996

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