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Magnetotransistor Based on the Carrier Recombination—Deflection Effect

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7 Author(s)
Leepattarapongpan, C. ; Nat. Electron. & Comput. Technol. Center, Thai Microelectron. Center, Chachoengsao, Thailand ; Phetchakul, T. ; Penpondee, N. ; Pengpad, P.
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This paper presents the three-terminal magnetotransistor based on the carrier recombination-deflection effect. Three-terminal magnetotransistor can detect vertical and lateral magnetic field direction. The structure of magnetotransistor consists of one emitter, one collector and one base contact. The devices can detect magnetic field by relying on the difference between base current and collector current (¿ICB). The result from experiments closely matched the simulated 3-D modeling with base width of 20 ¿m at substrate thickness of 600 ¿m . From the experiment, the magnetotransistor had the highest sensitivity of 10.25%/T when emitter current was at 10 mA. This research on the three-terminal magnetotransistor can achieve magnetic sensors with small size, high performance and wide range of applications.

Published in:

Sensors Journal, IEEE  (Volume:10 ,  Issue: 2 )

Date of Publication:

Feb. 2010

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