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Comparison of microwave inductors fabricated on silicon-on-sapphire and bulk silicon

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6 Author(s)
Johnson, R.A. ; Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA ; Chang, C.E. ; Asbeck, P.M. ; Wood, M.E.
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Inductors are important elements of microwave circuits that frequently require high self-resonant frequencies and high quality factors. In this work, circular spiral inductors fabricated on silicon-on-sapphire (SOS) and bulk silicon are compared. Due to the low-loss dielectric substrate, SOS inductors showed both higher self-resonant frequencies and higher quality factors than those fabricated on bulk silicon. Small-signal models extracted for the inductors confirm that the degradation of the inductor characteristics in bulk silicon stems from losses in the substrate

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:6 ,  Issue: 9 )