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Monolithic integration of AlGaAs/GaAs HBT and GaAs junction-gate floated electron channel field effect transistor using selective MOCVD growth

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3 Author(s)
Hyunchol Shin ; Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea ; Jeong-Hwan Son ; Young-Se Kwon

A novel GaAs BiFET structure based on AlGaAs/GaAs HBT and GaAs junction-gate floated electron channel field effect transistor (J-FECFET) has been developed. Selective metalorganic chemical vapor deposition (MOCVD) growth is extensively used for the BiFET. Structural advantage of the BiFET is that the epitaxial layers of the J-FECFET are identical to the lower part of a conventional heterojunction bipolar transistor (HBT). Transconductance of the fabricated J-FECFET with 1×200 μm2 gate is 102 mS/mm with fT and f MAX of 10.7 GHz and 27.3 GHz, respectively. DC current gain of HBT is 21 at a collector current density of 50 kA/cm2 with emitter area of 3×2 μm2. The new integration technology offer a foundation for development of various multifunction monolithic microwave integrated circuits (MMIC's)

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:6 ,  Issue: 9 )

Date of Publication:

Sep 1996

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