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30-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTs

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7 Author(s)
Chia-Ta Chang ; Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Heng-Tung Hsu ; Chang, Edward Yi ; Chien-I Kuo
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We demonstrate a 100-nm-gate-recessed n-GaN/AlGaN/GaN high-electron mobility transistor (HEMT) with low-noise properties at 30 GHz. The recessed GaN HEMT exhibits a low ohmic-contact resistance of 0.28 ????mm and a low gate leakage current of 0.9 ??A/mm when biased at VGS = -3 V and VDS = 10 V. At the same bias point, a minimum noise figure of 1.6 dB at 30 GHz and an associated gain of 5 dB were achieved. To the best of our knowledge, this is the best noise performance reported at 30 GHz for gate-recessed AlGaN/GaN HEMTs.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 2 )

Date of Publication:

Feb. 2010

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