Referenced Items are not available for this document.
We demonstrate a 100-nm-gate-recessed n-GaN/AlGaN/GaN high-electron mobility transistor (HEMT) with low-noise properties at 30 GHz. The recessed GaN HEMT exhibits a low ohmic-contact resistance of 0.28 ????mm and a low gate leakage current of 0.9 ??A/mm when biased at VGS = -3 V and VDS = 10 V. At the same bias point, a minimum noise figure of 1.6 dB at 30 GHz and an associated gain of 5 dB were achieved. To the best of our knowledge, this is the best noise performance reported at 30 GHz for gate-recessed AlGaN/GaN HEMTs.
Published in:
Electron Device Letters, IEEE
(Volume:31
,
Issue:
2
)
Date of Publication: Feb. 2010
- Page(s):
- 105 - 107
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 11133906
- Digital Object Identifier :
- 10.1109/LED.2009.2037167
- Product Type:
- Journals & Magazines
- Date of Publication :
- 22 December 2009
- Date of Current Version :
- 26 January 2010
- Issue Date :
- Feb. 2010
- Sponsored by :
- IEEE Electron Devices Society
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