By Topic

Molecular structure and carrier distributions at semiconductor/dielectric interfaces in organic field-effect transistors studied with sum frequency generation microscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Nakai, Ikuyo F. ; Department of Chemistry, Graduate School of Science, Kyoto University, Kyoto 606-8502, Japan ; Tachioka, Masaaki ; Ugawa, Akito ; Ueda, Tadashi
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3275805 

Infrared-visible sum frequency generation (SFG) microscopy was applied to the observation of semiconductor/dielectric interfaces in organic field-effect transistors fabricated with pentacene films and polyvinyl phenol dielectric layers. SFG intensity at the interface was greatly increased by carrier injection. The large enhancement in SFG intensity enables us to observe clearly the vibrational spectra of molecules and the spatial distributions of charge density at the interface.

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 24 )