Cart (Loading....) | Create Account
Close category search window
 

Evaluation of insulated gate bipolar transistor protection with ZnO thick films varistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Debeda, H. ; ENSEIRB, Univ. Bordeaux 1, Talence, France ; Azzopardi, S. ; Lucat, C. ; Martin-Stempin, M.P.
more authors

To have efficient protection of insulated gate bipolar transistor (IGBT) against various electrical voltage overshoots, screen-printed zinc oxide (ZnO) varistors have been developed using a planar structure. These varistors exhibit a breakdown voltage higher than 600 V and a non-linear coefficient up to 40. Some samples have been tested in real operations conditions to protect 1200 V IGBT in the case of unclamped inductive switching operations (default on the freewheeling diode). The results have shown the high efficiency of the designed varistors by clamping the voltage overshoot appearing on the IGBT. Optimising of the fabrication process (mechanical pressure or not on ZnO layers, ZnO thickness, electrode and substrate nature), lead to dissipated energy density of 105 J/cm3.

Published in:

Power Electronics, IET  (Volume:3 ,  Issue: 1 )

Date of Publication:

January 2010

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.