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A wafer level monitoring method for plasma-charging damage using antenna PMOSFET test structure

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5 Author(s)
Watanabe, H. ; ULSI Lab., Mitsubishi Electr. Corp., Itami, Japan ; Komori, Junko ; Higashitani, K. ; Mashiko, Y.
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We propose a novel monitoring method for plasma-charging damage using various antenna test structures. This method performs a quick and accurate evaluation using antenna PMOSFET. It was found that initial gate current and substrate current indicate plasma-charging damage. However, the present work suggests that monitoring the shift of drain current after a few seconds of HC stress is a more accurate method to indicate plasma-charging damage. The monitoring method using the present test structure is demonstrated to be useful for realizing highly reliable devices

Published in:

Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on

Date of Conference:

25-28 Mar 1996