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Process and Temperature Compensation for RF Low-Noise Amplifiers and Mixers

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3 Author(s)
Didac Gomez ; Electron. Eng. Dept., Univ. Politec. de Catalunya, Barcelona, Spain ; Milosz Sroka ; José Luis Gonzalez Jimenez

Temperature and process variations have become key issues in the design of integrated circuits using deep submicron technologies. In RF front-end circuitry, many characteristics must be compensated in order to maintain acceptable performance across all process corners and throughout the temperature range. This paper proposes a new technique consisting of a compensation circuit that adapts and generates the appropriate bias voltage for LNAs and mixers so that the variability with temperature and process corners of their main performance metrics (S-parameters, gain, noise figure, etc.) is minimized.

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IEEE Transactions on Circuits and Systems I: Regular Papers  (Volume:57 ,  Issue: 6 )