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Design and simulation of a wideband power amplifier from 600MHz to 1000MHz

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3 Author(s)
Derui Fan ; Nanjing Telecommun. Inst., Nanjing, China ; Yufen Deng ; Zhuang Li

This paper presents a 15 W power amplifier's design at UHF band using lateral diffused metal-oxide semi-conductor (LDMOS) transistor MRF9030LR1. In the design, we use load-pull simulation method and parameter sweep mode in order to study the linearity characteristics in working band and the impact of DC bias changing. The P1dB compression characteristic figure shows that the minimum compression point is at 770 MHz, and it also demonstrates that the linearity performance at 1000 MHz are greatly influenced by non-ideal capacitor. On the other hand, with DC bias increasing, the P1dB compression point increases little at the beginning but has a great drop quickly. Based on the analysis result, we find out the key on quality control in production and therefore improve the production efficiency.

Published in:

Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2009 3rd IEEE International Symposium on

Date of Conference:

27-29 Oct. 2009

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