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GaAs FET with a high mobility self-assembled planar nanowire channel on a (100) substrate

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2 Author(s)
Fortuna, S.A. ; Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA ; Xiuling Li

We demonstrate for the first time, a metal-semiconductor field-effect transistor (MESFET) fabricated with a selfassembled and high mobility <110> GaAs planar nanowire (NW) channel. The planar NWs were grown on GaAs (100) substrates with metalorganic chemical vapor deposition (MOCVD) through gold (Au) catalyzed vapor-liquidsolid (VLS) mechanism. Unlike conventional out-of-plane <111> NWs, these <110> planar NWs grow selfaligned in the [0-11] or [01-1] directions laterally and epitaxially on the surface and stay effectively "pinned" to the (100) substrate during growth, as illustrated in Fig. la-b. They are also free of twin-defects that are often found in conventional <111> III-V NWs. In addition, they can also be transfer-printed to other substrates such as Si using a smart release scheme and standard contact printing [1]. All of these naturally make the planar NWs integratable and compatible with existing circuit design and process technology.

Published in:

Device Research Conference, 2009. DRC 2009

Date of Conference:

22-24 June 2009