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Top-gate ZnO nanowire transistors with ultrathin organic gate dielectric

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6 Author(s)
Kalblein, D. ; Planck Inst. for Solid State Res., Stuttgart, Germany ; Bottcher, H.J. ; Weitz, R.T. ; Zschieschang, U.
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To take full advantage of the small size and excellent charge transport properties of inorganic nanowires, we have prepared FETs and integrated circuits based on individual single-crystalline ZnO nanowires with patterned, metallic top gate electrodes and a thin, solution-processed gate dielectric.

Published in:

Device Research Conference, 2009. DRC 2009

Date of Conference:

22-24 June 2009

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