By Topic

Flexible plastic substrate ZnO thin film transistor circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Zhao, D.A. ; Center for Thin Film Devices & Mater. Res. Inst., PA, USA ; Mourey, D.A. ; Jackson, T.N.

Oxide semiconductor-based thin film transistors (TFTs) have potential as higher performance and improved stability replacements for amorphous silicon TFTs in displays and other large-area electronics. ZnO TFTs fabricated by pulsed laser deposition (PLD) at 400¿C on GaAs substrates have demonstrated mobility over 100 cm2/V-s, and five-stage ring oscillators based on 0.5 ¿m gate length indium gallium-zinc-oxide (IGZO) TFTs fabricated on silicon substrates have demonstrated propagation delay below 1 ns/stage for bootstrapped ring oscillators.

Published in:

Device Research Conference, 2009. DRC 2009

Date of Conference:

22-24 June 2009