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Flexible plastic substrate ZnO thin film transistor circuits

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3 Author(s)
Dalong A. Zhao ; Center for Thin Film Devices and Materials Research Institute ; Devin A. Mourey ; Thomas N. Jackson

Oxide semiconductor-based thin film transistors (TFTs) have potential as higher performance and improved stability replacements for amorphous silicon TFTs in displays and other large-area electronics. ZnO TFTs fabricated by pulsed laser deposition (PLD) at 400¿C on GaAs substrates have demonstrated mobility over 100 cm2/V-s, and five-stage ring oscillators based on 0.5 ¿m gate length indium gallium-zinc-oxide (IGZO) TFTs fabricated on silicon substrates have demonstrated propagation delay below 1 ns/stage for bootstrapped ring oscillators.

Published in:

2009 Device Research Conference

Date of Conference:

22-24 June 2009