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VLS-grown silicon nanowire tunnel FET

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8 Author(s)
K. E. Moselund ; IBM Research GmbH, Zurich Research Laboratory, Säumerstrasse 4, CH-8803 Rüschlikon, Switzerland ; H. Ghoneim ; M. T. Björk ; H. Schmid
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In the present work we demonstrate the successful implementation of tunneling field-effect transistors (TFETs) based on silicon nanowires (Si NWs) that were grown using the vapor-liquid-solid (VLS) growth method. Device optimization resulted in increased band-to-band tunneling with an on-current of 0.5 ¿¿A/¿¿m, and Ion/Ioff ratio of about 6 decades combined with an inverse subthreshold slope (SS) of around 100 mV/dec over several decades of current and even sub-60 mV/dec for the lowest currents.

Published in:

2009 Device Research Conference

Date of Conference:

22-24 June 2009