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Electric control of magnetization via control of carriers' spectrum anisotropy

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6 Author(s)
Chernyshov, A. ; Dept. of Phys., Purdue Univ., West Lafayette, IN, USA ; Overby, M. ; Rokhinson, L.P. ; Lyanda-Geller, Y.
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In this paper, we demonstrated two types of magnetization control: in device A uniaxial strain is applied by a strain-coupled piezoelectric material and magnetization direction is controlled by electrostatic voltages; in device B magnetization is controlled by spin-orbit effective field generated intrinsically by non-polarized dc current. In both cases we report reversible manipulation of magnetization direction, which demonstrates a direct implementation of a nonvolatile memory cell.

Published in:

Device Research Conference, 2009. DRC 2009

Date of Conference:

22-24 June 2009