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Electrical measurements of lateral spin transport in Si near a Si/SiO2 interface

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3 Author(s)
Hyuk-Jae Jang ; Dept. of Phys., Univ. of Maryland, College Park, MD, USA ; Biqin Huang ; Appelbaum, I.

In this paper we have realized true lateral spin transport in silicon using hot electron injection/detection techniques and demonstrated it with clear spin rotational signals in Hanle effect as well as spin valve measurements. Furthermore, we have investigated spin transport near the interface of silicon/silicon dioxide by applying a gate voltage. We observed broadening of the Hanle curve along with significant reduction of spin current polarization as electrons approach the interface.

Published in:

Device Research Conference, 2009. DRC 2009

Date of Conference:

22-24 June 2009

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