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High mobility ambipolar field effect transistors made from large-scale CVD graphitic thin films

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5 Author(s)
Cao, Helin ; Dept. of Phys., Purdue Univ., West Lafayette, IN, USA ; Yu, Qingkai ; Childres, Isaac ; Pei, Steven S.
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Ultrathin graphitic films containing only one or a few graphene layers have received great attention as a promising channel material to make "carbon-based" transistors, particularly for high speed and/or low power electronic devices. Back-gated or front-gated graphene field effect transistors (GFET) made from exfoliated (from bulk graphite) or epitaxially-grown (by surface decomposition of SiC) graphene layers can show electron and hole mobilities approaching 104 cm2/Vs or higher.

Published in:

Device Research Conference, 2009. DRC 2009

Date of Conference:

22-24 June 2009