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Optically transparent and mechanically flexible thin-film transistors have recently attracted attention for next generation transparent display technologies. Driving and switching transistors for transparent displays have challenging requirements such as high optical transparency, large-scale integration, suitable drive current (Ion) in Â¿A range, high on/off current ratio (Ion/Ioff), high field effect mobility, and uniform threshold voltage(Vt). In this study, we demonstrate fully-transparent high-performance and high-yield thin film transistors based on random growth of single-walled carbon nanotube (SWNT) network that are easy to fabricate., These SWNT-based transparent thin film transistors show excellent electrical and optical characteristics and unlike the devices previously reported they do not require electrical burning to achieve high on/off current ratios.
Device Research Conference, 2009. DRC 2009
Date of Conference: 22-24 June 2009