By Topic

Transparent driving thin-film transistor circuits based on uniformly grown single-walled carbon nanotubes network

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Sunkook Kim ; Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; Seongmin Kim ; Min Xu ; Lin Yu
more authors

Optically transparent and mechanically flexible thin-film transistors have recently attracted attention for next generation transparent display technologies. Driving and switching transistors for transparent displays have challenging requirements such as high optical transparency, large-scale integration, suitable drive current (Ion) in ¿A range, high on/off current ratio (Ion/Ioff), high field effect mobility, and uniform threshold voltage(Vt). In this study, we demonstrate fully-transparent high-performance and high-yield thin film transistors based on random growth of single-walled carbon nanotube (SWNT) network that are easy to fabricate., These SWNT-based transparent thin film transistors show excellent electrical and optical characteristics and unlike the devices previously reported they do not require electrical burning to achieve high on/off current ratios.

Published in:

Device Research Conference, 2009. DRC 2009

Date of Conference:

22-24 June 2009