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Nanoscale field-effect transistors (FETs) based on individual semiconducting carbon nanotubes are potentially useful for integrated circuits with large integration densities. The high temperatures required during the synthesis of carbon nanotubes do not prevent the realization of high-performance nanotube FETs on temperature-sensitive substrates, such as glass or plastics, since the nanotubes can be transferred from the growth substrate to a liquid suspension and from there to the target substrate. This paper reports on nanoscale FETs based on individual semiconducting carbon nanotubes with good static performance on glass substrates, and their integration into logic circuits that have large small-signal gain and can be switched at frequencies up to 500 kHz.
Device Research Conference, 2009. DRC 2009
Date of Conference: 22-24 June 2009