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A class-AB high-speed low-power operational amplifier in BiCMOS technology

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2 Author(s)
Sen, S. ; Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada ; Bosco Leung

A BiCMOS op-amp is described which exploits BiCMOS technology to obtain very high transconductance, slew-rate, and fast small-signal-settling response. The absence of vertical PNP transistor requires the op-amp to use a wideband, composite PMOS-vertical-NPN structure as a substitute for PNP transistors to realize a class-AB input stage of an op-amp. The AC small-signal equivalent circuit of the input stage is analyzed and methods for optimizing the nondominant pole positions to obtain fast settling are given. Measurements in the unity-gain buffer configuration indicate maximum slew-rates of 150 V/μs (rising) and 280 V/μs (falling) and a transconductance of 20 mS at a quiescent power of 20 mW from 5 V supply using a 0.8-μm BiCMOS process with peak fT of 11 GHz

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Solid-State Circuits, IEEE Journal of  (Volume:31 ,  Issue: 9 )