Referenced Items are not available for this document.
This brief presents a CMOS temperature sensor suitable for ultralow-power applications. With a MOS transistor operating in the linear region, a linear relationship between delay and temperature can be obtained. A differential sensing architecture is utilized to reduce the signal offset and increase the effective signal-to-noise ratio. A design methodology concerning power optimization and improved sensor linearity is also presented. The sensor, which occupies 0.0324 mm2, is fabricated using the TSMC 0.18-¿m one-polysilicon six-metal (1P6M) process. Measurement results show that the sensor consumes 405 nW with a 1-V supply at 1 ksample/s at room temperature. An inaccuracy value of -0.8°C to +1°C from 0°C to 100°C after calibration is achieved.
Published in:
Circuits and Systems II: Express Briefs, IEEE Transactions on
(Volume:56
,
Issue:
12
)
Date of Publication: Dec. 2009
- Page(s):
- 891 - 895
- ISSN :
- 1549-7747
- INSPEC Accession Number:
- 11020368
- Digital Object Identifier :
- 10.1109/TCSII.2009.2034201
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 15 December 2009
- Issue Date :
- Dec. 2009
- Sponsored by :
- IEEE Circuits and Systems Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
