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A 405-nW CMOS Temperature Sensor Based on Linear MOS Operation

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2 Author(s)
Law, M.K. ; Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China ; Bermak, A.

This brief presents a CMOS temperature sensor suitable for ultralow-power applications. With a MOS transistor operating in the linear region, a linear relationship between delay and temperature can be obtained. A differential sensing architecture is utilized to reduce the signal offset and increase the effective signal-to-noise ratio. A design methodology concerning power optimization and improved sensor linearity is also presented. The sensor, which occupies 0.0324 mm2, is fabricated using the TSMC 0.18-¿m one-polysilicon six-metal (1P6M) process. Measurement results show that the sensor consumes 405 nW with a 1-V supply at 1 ksample/s at room temperature. An inaccuracy value of -0.8°C to +1°C from 0°C to 100°C after calibration is achieved.

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Circuits and Systems II: Express Briefs, IEEE Transactions on  (Volume:56 ,  Issue: 12 )