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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:57 Issue:2 Help

Scaling Properties of \hbox {Ge} – \hbox {Si}_{x}\hbox {Ge}_{1 - x} Core–Shell Nanowire Field-Effect Transistors

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6 Author(s)
Nah, Junghyo ; Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA ; En-Shao Liu ; Varahramyan, K.M. ; Shahrjerdi, D.
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We demonstrate the fabrication of high-performance Ge-SixGe1-x core-shell nanowire (NW) field-effect transistors with highly doped source (S) and drain (D) and systematically investigate their scaling properties. Highly doped S and D regions are realized by low-energy boron implantation, which enables efficient carrier injection with a contact resistance much lower than the NW resistance. We extract key device parameters, such as intrinsic channel resistance, carrier mobility, effective channel length, and external contact resistance, as well as benchmark the device switching speed and on/off current ratio.

Published in:
Electron Devices, IEEE Transactions on  (Volume:57 ,  Issue: 2 )

Date of Publication: Feb. 2010

Page(s):
491 - 495
ISSN :
0018-9383
INSPEC Accession Number:
11071280
Digital Object Identifier :
10.1109/TED.2009.2037406
Product Type:
Journals & Magazines
Date of Publication :
15 December 2009
Date of Current Version :
19 January 2010
Issue Date :
Feb. 2010
Sponsored by :
IEEE Electron Devices Society

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