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Nondestructive Readout Operation of Oxide-Thin-Film-Transistor-Based 2T-Type Nonvolatile Memory Cell

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8 Author(s)
Sung-Min Yoon ; Convergence Components & Mater. Res. Lab., Electron. & Telecommun. Res. Inst. (ETRI), Daejeon, South Korea ; Chun-Won Byun ; Shinhyuk Yang ; Sang-Hee Ko Park
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A two-transistor-type nonvolatile memory cell composed of one-access and one-memory thin-film transistors (TFTs) was demonstrated. ZnO and poly(vinylidene fluoride-trifluoroethylene) were employed as semiconducting channels for both TFTs and ferroelectric-gate insulator for memory TFT, respectively, in which the cell structures and fabrication procedures were so carefully designed and optimized as to effectively incorporate both TFTs on the same glass substrate without any critical process damage even below 200??C. The fabricated memory cell successfully showed the write and nondestructive readout operations.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 2 )

Date of Publication:

Feb. 2010

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