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Multiple-route current-voltage (I-V) characteristics of GaAs-InGaAs metal-insulator-semiconductor-like (MIS) structure for multiple-valued logic applications

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6 Author(s)
Wen-Chau Liu ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Laih, L.-W. ; Lour, Wen‐Shiung ; Jun-Hui Tsai
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A new GaAs-InxGa1-xAs metal-insulator-semiconductor-like (MIS) device with the interesting dual-route and multiple-negative-differential-resistance (MNDR) current-voltage (I-V) characteristics has been fabricated and demonstrated. These performances are caused by the successive barrier lowering and potential redistribution effect. A novel multiple-route I-V characteristic is obtained in the studied device at low temperature (-130°C). This performance is different from the previously reported NDR switching device and has not yet been found in other devices. The interesting property of the studied structure provides a promising candidate for switching device applications

Published in:

Quantum Electronics, IEEE Journal of  (Volume:32 ,  Issue: 9 )

Date of Publication:

Sep 1996

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