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Low voltage NVGTM: a new high performance 3 V/5 V flash technology for portable computing and telecommunications applications

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3 Author(s)
Bergemont, A. ; Fairchild Res. Centre, Nat. Semicond. Corp., Santa Clara, CA, USA ; Min-Hwa Chi ; Haggag, Hosam

A new concept for low voltage NOR Virtual Ground (NVGTM) flash memory with a fast access time is introduced. New array concepts and process technologies are introduced to achieve programming by 5 V Vpp and reading at 3 V±10% Vcc . The array performance is enhanced by segmentation and using extra access transistor for each segment. The control of the erased cell threshold voltage distribution is one of the key issues for the 3 V read operation in low voltage flash. The erase threshold distribution is minimized by Fowler-Nordheim tunneling and hot electron injection self-recovering techniques

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Electron Devices, IEEE Transactions on  (Volume:43 ,  Issue: 9 )