Cart (Loading....) | Create Account
Close category search window

The origin and evolution of V-defects in InxAl1-xN epilayers grown by metalorganic chemical vapor deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
Miao, Z.L. ; State Key Laboratory of Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People’s Republic of China ; Yu, T.J. ; Xu, F.J. ; Song, J.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Near-lattice-matched and highly compressive-strained InxAl1-xN epilayers were grown on GaN templates by metalorganic chemical vapor deposition. The V-defects associated with screw-component threading dislocations (TDs) were found in all the InxAl1-xN layers. Their origin and evolution were investigated through near-lattice-matched In0.173Al0.827N layers with different thicknesses. Furthermore, small V-defects not associated with TDs were also found in InxAl1-xN layers with high In composition (x=0.231). Stacking mismatch boundaries induced by lattice relaxation in InxAl1-xN epilayers under large strain is believed to be another mechanism forming V-defects.

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 23 )

Date of Publication:

Dec 2009

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.