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The origin and evolution of V-defects in InxAl1-xN epilayers grown by metalorganic chemical vapor deposition

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11 Author(s)
Miao, Z.L. ; State Key Laboratory of Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People’s Republic of China ; Yu, T.J. ; Xu, F.J. ; Song, J.
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Near-lattice-matched and highly compressive-strained InxAl1-xN epilayers were grown on GaN templates by metalorganic chemical vapor deposition. The V-defects associated with screw-component threading dislocations (TDs) were found in all the InxAl1-xN layers. Their origin and evolution were investigated through near-lattice-matched In0.173Al0.827N layers with different thicknesses. Furthermore, small V-defects not associated with TDs were also found in InxAl1-xN layers with high In composition (x=0.231). Stacking mismatch boundaries induced by lattice relaxation in InxAl1-xN epilayers under large strain is believed to be another mechanism forming V-defects.

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 23 )

Date of Publication:

Dec 2009

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