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Excitation wavelength independent sensitized Er3+ concentration in as-deposited and low temperature annealed Si-rich SiO2 films

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6 Author(s)
Savchyn, Oleksandr ; CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816, USA ; Todi, Ravi M. ; Coffey, Kevin R. ; Ono, Luis K.
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Erbium sensitization is observed in as-deposited Er3+ doped Si-rich SiO2, ruling out the involvement of Si nanocrystals in the Er3+ excitation in these samples. The Er3+ excitation cross section in this material is similar within a factor 3 to that of samples annealed at 600 °C under 355 and 532 nm excitation. The density of sensitized Er3+ ions is shown to be excitation wavelength independent, while the shape of the Er3+ excitation spectra is governed by a wavelength dependent Er3+ excitation cross section. These findings enable the use of a broad range of wavelengths for the efficient excitation of this gain medium.

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 23 )

Date of Publication:

Dec 2009

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